Spherical aluminum nitride fillers for heat-conducting plastic packages

Spherical aluminum nitride fillers for heat-conducting plastic packages
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DOI:
10.1111/j.1551-2916.2005.00456.x
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发表时间:
2005-09-01
影响因子:
3.9
通讯作者:
Lai, GC
Lai, GC
中科院分区:
材料科学2区
文献类型:
--
作者:
Ohashi, M;Kawakami, S;Lai, GC

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封装材料不仅需要具有与 IC 器件兼容的合适热膨胀系数 (CTE) 和低介电常数,以减少器件传播延迟,而且还需要具有高导热率,以散发高功耗、高速 IC 和高密度封装产生的大量热量。二氧化硅等填料已与聚合物混合以改善其性能。氮化铝 (AIN) 被认为是一种替代材料,因为它具有类似于 320 W/mK(1) 的较高理论热导率、与硅芯片兼容的 CTE 以及较低的介电常数。商用AlN填料呈棱角状,因为它们是通过研磨由铝金属直接氮化合成的粗AlN粉末并分级而制备的。当与聚合物混合时,有角 AIN 预计不会具有高流动性,因此堆积密度较低。最近,我们成功获得了单晶球形AlN填料。此外,填充球形AlN的聚合物复合材料作为封装剂表现出优异的导热性(> 8 W/mK);用于散发电子设备中产生的热量。
It is necessary for encapsulants to have not only a suitable coefficient of thermal expansion (CTE) compatible to IC devices and a low dielectric constant to reduce the device propagation delay, but also a high thermal conductivity to dissipate large amounts of heat from power-hungry, high-speed IC and high-density packages. Fillers such as silica have been mixed with polymers to improve their properties. Aluminum nitride (AIN) is considered as an alternative one, because it has a higher theoretical thermal conductivity of similar to 320 W/mK(1), a compatible CTE with silicon chips and a low dielectric constant. Commercial AIN fillers are angular in shape, because they are prepared via grinding coarse AIN powders synthesized by direct nitridation of aluminum metal and classification. The angular AIN are not expected to have high fluidity when mixed with polymers and hence low packing density. Recently, we successfully obtained single-crystalline spherical AIN fillers. Furthermore, polymer composites filled with the spherical AIN showed excellent thermal conductivity (> 8 W/mK) as encapsulants; for dissipating the heat generated in electronic devices.