Conditions for Domain-Free Negative Capacitance
Conditions for Domain-Free Negative Capacitance
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DOI：
10.1109/ted.2023.3278617
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发表时间：
2023-08
影响因子：
3.1
通讯作者：
Prasanna Venkatesan Ravindran;P. G. Ravikumar;A. Khan
中科院分区：
文献类型：
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作者：
Prasanna Venkatesan Ravindran;P. G. Ravikumar;A. Khan
虽然负电容 (NC) 已在铁电-电介质 (FE-DE) 异质结构中以电容增强的形式得到证明，但迄今为止的所有实验证据都表明其中存在域。在这里，我们解决这个问题：在 FE-DE 异质结构中实现理想的无域 NC 的条件是什么？我们的主要主张是，对于给定的铁电层和介电层厚度，畴壁能量参数存在一个临界值——高于该值，系统将稳定在理想且鲁棒的无畴NC状态，并且对畴形成具有鲁棒性。我们的分析表明，要实现理想的数控，应努力理解通过高通量设计、发现和铁电体工程在理论和实验等各个方面控制畴壁能量的方法。
While negative capacitance (NC) has been demonstrated in ferroelectric-dielectric (FE-DE) heterostructures in the form of capacitance enhancement, all experimental evidence, to date, suggests the existence of domains therein. Here, we address the question: what are the conditions to achieve ideal, domain-free NC in FE-DE heterostructures? Our main claim is that for given thicknesses of the ferroelectric and the dielectric layers, there is a critical value of domain wall energy parameter—above which the system would be stabilized in an ideal and robust domain-free NC state and would be robust against domain formation. Our analyses suggest that to achieve ideal NC, efforts should lie in understanding the means to control the domain wall energy on all fronts, both theory and experiments via high throughput design, discovery, and engineering of ferroelectrics.