Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate
Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate
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DOI：
10.1021/acsaelm.2c00181
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发表时间：
2022-04
影响因子：
4.7
通讯作者：
Kaiwen Li;A. Shimizu;Xinyi He;K. Ide;Kota Hanzawa;K. Matsuzaki;T. Katase;H. Hiramatsu;Hideo Hosono;Qun Zhang;T. Kamiya
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作者：
Kaiwen Li;A. Shimizu;Xinyi He;K. Ide;Kota Hanzawa;K. Matsuzaki;T. Katase;H. Hiramatsu;Hideo Hosono;Qun Zhang;T. Kamiya
利用超高真空溅射技术，通过抑制施主杂质的方法，研究了多晶Zn 3 N2薄膜的本征物理性质。剩余载流子密度降低到4.4 × 1017 cm-3，得到非简并的Zn_3 N_2薄膜。在这部电影中，我们观察到，晶界散射有一个显着的影响流动性，在以前的报告退化膜。通过使用濑户模型拟合，晶粒内迁移率达到340 cm 2 V-1 s-1，这与外延薄膜的迁移率相当，即使它们在室温下沉积。还检查了具有非简并Zn 3 N2有源层的双电层晶体管，以验证其作为晶体管有源层材料的潜力。本报告中对多晶Zn 3 N2半导体陷阱密度的深入了解意味着探索高性能柔性电子器件的机会。
We investigated the intrinsic physical properties of polycrystalline Zn3N2thin films by suppressing donor impurities using the ultrahigh-vacuum sputtering technique. The residual carrier density was reduced to 4.4 × 1017cm–3, resulting in a nondegenerate Zn3N2thin film. In this film, we observed that grain boundary scattering had a significant effect on mobility, in contrast to previous reports on degenerate films. By fitting using the Seto model, the in-grain mobility reached 340 cm2V–1s–1, which is comparable to the mobility of epitaxial thin films, even though they were deposited at room temperature. Electric-double-layer transistors with nondegenerate Zn3N2active layers were also examined to verify the potential as a transistor active layer material. The insights into trap density of polycrystalline Zn3N2semiconductor in this report imply opportunities to explore high-performance flexible electronic devices.