Nitrogen-Based Magneto-ionic Manipulation of Exchange Bias in CoFe/MnN Heterostructures
Nitrogen-Based Magneto-ionic Manipulation of Exchange Bias in CoFe/MnN Heterostructures
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DOI：
10.1021/acsnano.2c12702
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发表时间：
2023-03
期刊：
影响因子：
17.1
通讯作者：
C. J. Jensen;A. Quintana;P. Quarterman;A. Grutter;P. Balakrishnan;Huairuo Zhang;A. Davydov;Xixiang Zhang;Kai Liu
中科院分区：
文献类型：
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作者：
C. J. Jensen;A. Quintana;P. Quarterman;A. Grutter;P. Balakrishnan;Huairuo Zhang;A. Davydov;Xixiang Zhang;Kai Liu
电场控制铁磁/反铁磁（FM/AF）界面的交换偏置效应为低能耗自旋电子学的发展提供了可能。特别地，固态磁离子装置是非常有吸引力的，因为它可以通过离子迁移转换所有重要的FM/AF界面来允许可重新配置的电子器件。在这项工作中，我们展示了一种方法，结合了化学诱导的磁离子效应与电场驱动的氮在Ta/Co0.7Fe0.3/MnN/Ta结构的电操纵交换偏置。在场冷却异质结构时，发生氮从MnN到Ta层中的离子扩散。在300 K和10 K时观察到618 Oe和1484 Oe的显著交换偏置，在电压调节后分别可以进一步增强5%和19%。这种增强可以通过相反极性的电压调节来逆转。在极化中子反射计研究中观察到，MnN层内的氮迁移和进入Ta覆盖层引起交换偏置的增强。这些结果表明，一个有效的氮离子为基础的磁离子操纵交换偏置在固态设备。
Electric field control of the exchange bias effect across ferromagnet/antiferromagnet (FM/AF) interfaces has offered exciting potentials for low-energy-dissipation spintronics. In particular, the solid-state magneto-ionic means is highly appealing as it may allow reconfigurable electronics by transforming the all-important FM/AF interfaces through ionic migration. In this work, we demonstrate an approach that combines the chemically induced magneto-ionic effect with the electric field driving of nitrogen in the Ta/Co0.7Fe0.3/MnN/Ta structure to electrically manipulate exchange bias. Upon field-cooling the heterostructure, ionic diffusion of nitrogen from MnN into the Ta layers occurs. A significant exchange bias of 618 Oe at 300 K and 1484 Oe at 10 K is observed, which can be further enhanced after a voltage conditioning by 5 and 19%, respectively. This enhancement can be reversed by voltage conditioning with an opposite polarity. Nitrogen migration within the MnN layer and into the Ta capping layer cause the enhancement in exchange bias, which is observed in polarized neutron reflectometry studies. These results demonstrate an effective nitrogen-ion based magneto-ionic manipulation of exchange bias in solid-state devices.