On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks
On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks
复制标题
具有铪基/金属栅极堆叠的 n 型和 p 型金属氧化物半导体场效应晶体管迁移率降低的根源
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
L. Selmi
中科院分区：
文献类型：
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作者：
P. Toniutti;P. Palestri;D. Esseni;F. Driussi;M. Michielis;L. Selmi
我们通过精确的多子带蒙特卡罗模拟和相当成熟的工艺技术的实验数据之间的广泛比较，研究了n-和p- mosfet中基于铪的介电体测量的迁移率降低。我们考虑了远程（软光学）声子的散射和与单层和偶极子电荷的远程库仑相互作用。对模型假设和限制的仔细检查使我们得出结论，软光学声子散射本身不能定量解释几个小组报告的电子和空穴反转层的实验迁移率降低。只有假设栅极堆中库仑散射中心的浓度一直很高，才能重现实验数据。然而，相应的电荷或偶极子密度会导致实验中未观察到的大阈值电压位移。因此，我们得出结论，导致mosfet迁移率降低的主要机制是…
We examine the mobility reduction measured in hafnium-based dielectrics in n- and p-MOSFETs by means of extensive comparison between accurate multi-subband Monte Carlo simulations and experimental data for reasonably mature process technologies. We have considered scattering with remote (soft-optical) phonons and remote Coulomb interaction with single layers and dipole charges. A careful examination of model assumptions and limitations leads us to the conclusion that soft optical phonon scattering cannot quantitatively explain by itself the experimental mobility reduction reported by several groups for neither the electron nor the hole inversion layers. Experimental data can be reproduced only assuming consistently large concentrations of Coulomb scattering centers in the gate stack. However, the corresponding charge or dipole density would result in a large threshold voltage shift not observed in the experiments. We thus conclude that the main mechanisms responsible for the mobility reduction in MOSFETs ...