AlGaN/GaN MIS-gate HEMTs with SiCN gate stacks
AlGaN/GaN MIS-gate HEMTs with SiCN gate stacks
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具有 SiCN 栅极堆叠的 AlGaN/GaN MIS 栅极 HEMT
DOI：
10.1002/pssc.201200609
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
T. Suemitsu
中科院分区：
文献类型：
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作者：
K. Kobayashi;M. Kano;T. Yoshida;R. Katayama;T. Matsuoka;T. Otsuji;T. Suemitsu
本文报道了采用等离子体增强化学气相沉积（PECVD）技术，利用六甲基二氮杂烷（HMDS）气相沉积了具有SiCN栅极堆栈的AlGaN/GaN金属-绝缘体-半导体（MIS）栅极高电子迁移率晶体管（hemt）。对于栅极长度为0.3 μ m的SiCN MIS - hemt，获得了69 mS/mm的跨导和25 GHz的电流增益截止频率（fT）。这些性能优于肖特基门参考器件。为了澄清这些改进的来源，我们验证了在SiCN的PECVD过程中氢气作为HMDS的载气的清洁效果。结果表明，氢退火提高了漏极电流密度和fta，抑制了电流崩溃。（©2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
This paper reports AlGaN/GaN metal‐insulator‐semiconductor (MIS)‐gate high electron mobility transistors (HEMTs) with a SiCN gate stack deposited by plasma‐enhanced chemical vapour deposition (PECVD) using hexamethyldisilazane (HMDS) vapor. A transconductance of 69 mS/mm and a current gain cutoff frequency (fT) of 25 GHz are obtained for the SiCN MIS‐HEMTs with a gate length of 0.3 µm. These performances are better than those of the Schottky‐gate reference devices. To clarify the origin of these improvements, we verified the cleaning effect of hydrogen used as a carrier gas for HMDS during the PECVD of SiCN. The results indicate that the hydrogen annealing improves the drain current density andfTas well as it suppresses the current collapse. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)