Temperature dependence of CsI (T1) absolute scintillation yield
Temperature dependence of CsI (T1) absolute scintillation yield
复制标题
CsI (T1) 绝对闪烁产率的温度依赖性
DOI：
10.1109/tns.1993.8526779
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发表时间：
1993
影响因子：
1.8
通讯作者：
C. Moss
中科院分区：
文献类型：
--
作者：
J. Valentine;D. Wehe;G. Knoll;C. Moss
将一个边长为0.8 cm的立方CsI（TI）晶体安装在1 x 1 cm正方形光电二极管上，以测量CsI（TI）在-100至+50 °C之间的绝对闪烁产额。室温产额测量为64，800 ± 3，200光子/MeV。观察到最大产率发生在约-35 ° C，比室温产率高约6%。观察到产率在高于和低于该最大值时单调下降。在-100 ° C和+50 °C下，测得的产率分别为室温产率的约64%和95%。在-55至+50 °C的范围内，观察到闪烁产率保持在室温产率的+6%以内。考虑了闪烁衰减时间、闪烁发射光谱和光电二极管量子效率随波长的变化。
A cubic CsI(TI) crystal of 0.8 cm on a side was mounted on a 1 x 1 cm square photodiode to measure the absolute scintillation yield of CsI(TI) between - 100 and + 50°C. The room temperature yield was measured to be 64,800 + 3,200 photons/MeV. The maximum yield was observed to occur at about -35°C, approximately 6% above the room temperature yield. The yield was observed to decrease monotonically above and below this maximum. At - 100 and + 50°C the yield was measured to be about 64% and 95% of the room temperature yield, respectively. Over the range of - 55 to + 50°C the scintillation yield was observed to remain within +6% of the room temperature yield. The temperature dependence of scintillation decay time, scintillation emission spectrum, and wavelengthdependent photodiode quantum efficiency were considered.