Electric field-induced transport modulation in VO2 FETs with high-k oxide/organic parylene-C hybrid gate dielectric
Electric field-induced transport modulation in VO2 FETs with high-k oxide/organic parylene-C hybrid gate dielectric
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DOI：
10.1063/1.4941233
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发表时间：
2016-02
影响因子：
4
通讯作者：
Tingting Wei;T. Kanki;K. Fujiwara;Masashi Chikanari;Hidekazu Tanaka
中科院分区：
文献类型：
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作者：
Tingting Wei;T. Kanki;K. Fujiwara;Masashi Chikanari;Hidekazu Tanaka
本文报道了用高k氧化物Ta2O5/有机二甲苯- c杂化介电门控VO2薄膜进行可逆和即时电阻开关的观察。在不同温度的绝缘状态下，电阻变化率发生在相变温度附近。我们还发现了与相变温度抑制有关的不对称空穴-电子载流子调制。本研究结果为通过静电场诱导输运调制澄清VO2中金属-绝缘体跃迁的起源提供了可能。
We report on the observation of reversible and immediate resistance switching by high-k oxide Ta2O5/organic parylene-C hybrid dielectric-gated VO2 thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO2 through the electrostatic field-induced transport modulation.