An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor
An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor
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DOI：
10.1109/ted.2020.3038621
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发表时间：
2021-01-01
影响因子：
3.1
通讯作者：
Sugawa, Shigetoshi
中科院分区：
文献类型：
--
作者：
Fujihara, Yasuyuki;Murata, Maasa;Sugawa, Shigetoshi
本文提出了一种原型线性响应单曝光CMOS图像传感器，具有两级横向溢出积分电容（LOFIC），表现出超过120 dB的动态范围（DR），11.4 Me-满阱容量（FWC）和最大信噪比（SNR）为70 dB。在所有的开关点的测量SNR超过35 dB感谢建议的两级LOFIC。
This article presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration capacitors (LOFIC) exhibiting over the 120-dB dynamic range (DR) with 11.4 Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70 dB. The measured SNR at all switching points were over 35 dB thanks to the proposed two-stage LOFIC.