Anomalous Anisotropic Magnetoresistance of Antiferromagnetic Epitaxial Bimetallic Films: Mn2Au and Mn2Au/Fe Bilayers
Anomalous Anisotropic Magnetoresistance of Antiferromagnetic Epitaxial Bimetallic Films: Mn2Au and Mn2Au/Fe Bilayers
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DOI：
10.1002/adfm.201601348
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发表时间：
2016-08-23
影响因子：
19
通讯作者：
Shvets, Igor V.
中科院分区：
文献类型：
--
作者：
Wu, Han-Chun;Abid, Mohamed;Shvets, Igor V.
近年来，反铁磁自旋电子学（AFM）的研究取得了很大的进展，其中铁磁电极被反铁磁体所取代。本文研究了四元反铁磁外延膜Mn_2Au和Mn_2Au/Fe双层膜的各向异性磁电阻效应。观察到具有额外峰的异常AMR效应。这项研究从理论和实验上证明，可以在室温下观察和控制Mn 2Au的AFM自旋，这是可以实现的，特别是相对较小的磁场为200 mT。Au和Mn之间的强杂化以及Mn 2 Au的本征二次各向异性从界面双二次各向异性的强修改导致额外的异常AMR分量为1%。结果表明，Mn_2Au薄膜可用于室温反铁磁自旋电子学。
Recently intensive efforts have been devoted to the emerging field of anti-ferromagnetic (AFM) spintronics, where ferromagnetic electrodes are substituted by antiferromagnets. This study investigates the anisotropic magnetoresistance (AMR) of epitaxial tetragonal antiferromagnetic bimetallic films: Mn2Au and Mn2Au/Fe bilayers. An anomalous AMR effect with additional peaks is observed. This study theoretically and experimentally demonstrates that the AFM spins of Mn2Au can be viewed and controlled at room temperature, and this is achievable with a notably relatively small magnetic field of 200 mT. Strong hybridization between Au and Mn, and strong modification of the intrinsic quadratic anisotropy of Mn2Au from interfacial biquadratic anisotropy result in an additional anomalous AMR component of 1%. The fi ndings suggest that Mn2Au films can be used in room temperature antiferromagnetic spintronics.