Correlation between current–voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on n-GaN grown by metalorganic chemical vapor deposition
Correlation between current–voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on n-GaN grown by metalorganic chemical vapor deposition
复制标题
通过金属有机化学气相沉积生长的 n-GaN 上的亚微米肖特基接触评估电流-电压特性和位错之间的相关性
DOI：
10.1116/1.1547735
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发表时间：
2003
影响因子：
1.4
通讯作者：
T. Suemitsu
中科院分区：
文献类型：
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作者：
K. Shiojima;T. Suemitsu
我们直接研究了位错对金属有机化学气相沉积生长的n-GaN上Au/Ni接触的伏安特性的影响。我们评估的主要特点是结合了电子束光刻形成的亚微米肖特基点阵和原子力显微镜结合导电探针的I-V测量。自由电子浓度为3×1017 cm−3的样品表明，混合位错和纯边缘位错都不影响I-V特性(肖特基势垒高度、理想因子和反向漏电流)。讨论了解释结果的可能模型。另一方面，研究发现，直径为几百纳米的大结构缺陷会使触点短路。这些结果表明，在制作短栅场效应晶体管时，不应考虑含有位错的栅肖特基接触的均匀性和稳定性问题。这些结果表明，在制作短栅场效应晶体管时，不应考虑含有位错的栅肖特基接触的均匀性和稳定性问题。
We directly evaluated the effect of dislocations on current–voltage (I–V) characteristics of Au/Ni contacts formed on n-GaN grown by metalorganic chemical vapor deposition. The key feature of our evaluation is the combination of submicrometer Schottky dot array formation by electron-beam lithography and I–V measurement by atomic force microscopy with a conductive probe. The sample, which has a free electron concentration of 3×1017 cm−3, showed that neither mixed nor pure edge dislocations affect the I–V characteristics (Schottky barrier height, ideality factor, and reverse leakage current). Possible models to explain the results are discussed. On the other hand, it was found that a large structural defect with a diameter of a few hundred nanometers shorted the contact. The density, however, was less than 4×105 cm−2. These results indicate that, in fabricating short-gate field-effect transistors, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity an...