Optical properties of alpha -SiC:H thin films grown by rf sputtering.
Optical properties of alpha -SiC:H thin films grown by rf sputtering.
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射频溅射生长的 α-SiC:H 薄膜的光学特性。
DOI：
10.1103/physrevb.49.8191
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Thanailakis
中科院分区：
文献类型：
--
作者：
Kalomiros;Papadopoulos;Logothetidis;Magafas;Georgoulas;Thanailakis
本文研究了射频溅射法生长的α-SiC：H薄膜的光学透射和反射特性。在1.5-6.3 eV范围内，用椭圆偏振法测量了介电函数的真实的部分（ε 1）和虚部分（ε 2）。得到了衬底温度和氢气流量对Δ 1和Δ 2的依赖关系。实验结果建模使用的介电函数的理论公式。使用RF离子蚀刻和原位椭圆偏振技术来检查可能的覆盖层的影响并建立介电函数的实际值。薄膜的能隙被发现是由它们在氢中的含量控制的，随着氢的掺入而增加。证据表明，氢的掺入诱导空隙的形成，导致在前表面层中的密度赤字，给出。的最大值为102米的一个x，发现在约5 eV，减少与氢气流量的增加，而基板温度的增加导致在增加的光学响应。用背反射技术研究了射频溅射α-SiC：H薄膜的膜-基界面上α-Si或α-C团簇的形成。
In this work, the optical transmission and reflection of α-SiC: H thin films, grown by rf sputtering, are studied. The absorption coefficient is found. The real (ɛ 1) and the imaginary (ɛ 2) part of the dielectric function are determined by means of ellipsometric measurements, in the region 1.5–6.3 eV. The dependence of ɛ 1 and ɛ 2 on substrate temperature and hydrogen flow rate is obtained. The experimental results are modeled using a theoretical formula for the dielectric function. rf ion etching and an in situ ellipsometric technique are used to check the influence of possible overlayers and establish realistic values of the dielectric function. The energy gaps of the films are found to be controlled by their content in hydrogen, increasing with hydrogen incorporation. Evidence that the incorporation of hydrogen induces the formation of voids, resulting in a density deficit in the front surface layers, is given. The maximum values ɛ 2 m a x, found at approximately 5 eV, are reduced with the increase of the hydrogen flow rate, while increased substrate temperatures result in increased optical response. The formation of α-Si or α-C clusters in the film-substrate interface of the rf sputtered α-SiC: H films is probed using back reflection techniques.