Analysis of ZnTe:Cu/Ti contacts for crystalline CdTe
Analysis of ZnTe:Cu/Ti contacts for crystalline CdTe
复制标题
晶体 CdTe 的 ZnTe:Cu/Ti 接触分析
DOI：
--
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
B. To
中科院分区：
文献类型：
--
作者：
T. Gessert;J. Duenow;S. Ward;J. Geisz;B. To
最近对薄膜CD/CDTE光伏（PV）设备的研究表明，除非CDTE同时增加了CDTE的净受体密度（NA）和少数族裔载体扩散长度（LD），否则无法实现明显更高的设备性能。 。为了实现这一目标，NREL的CDTE研究当前包括使用散装晶体CDT E或外延CDT E层的研究，以研究各种固有和外源掺杂剂的受控掺入期间Na和Ld的变化。不幸的是，对于许多此类研究，电气接触仍然是一个限制因素。在本文中，我们描述了旨在增强我们对使用NREL Znte：Cu/Ti背部接触过程的优势和缺点的理解，以分析各种晶体CDTE样品。由于已显示这种接触可以产生高性能和稳定性，因此我们认为，了解其在晶体材料上的使用可以推动我们开发替代性接触过程，从而体现出更高性能的潜力。
Recent studies of thin-film CdS/CdTe photovoltaic (PV) devices have suggested that significantly higher device performance will not be achieved unless both the net-acceptor density (NA) and minority-carrier diffusion length (LD) in the CdTe are simultaneously increased. Toward this goal, CdTe research at NREL currently includes studies that use either bulk crystalline CdT e or epitaxial CdT e layers to study changes in NA and LD during the controlled incorporation of various intrinsic and extrinsic dopants. Unfortunately, for many of these studies, electrical contacts remain a limiting factor. In this paper we describe studies designed to enhance our understanding of the strengths and weaknesses of using the NREL ZnTe:Cu/Ti back-contact process for the analysis of various crystalline CdTe samples. Because this contact has been shown to yield high performance and stability, we believe that understanding its use on crystalline materials could advance our development of alternative contact processes that embody the potential for even higher performance.