Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model
Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model
复制标题
DOI：
10.1016/j.ijheatmasstransfer.2005.04.031
复制
发表时间：
2005-10
影响因子：
5.2
通讯作者：
Lijun Liu;K. Kakimoto
中科院分区：
文献类型：
--
作者：
Lijun Liu;K. Kakimoto
提出了一种新的硅单晶生长直拉法(CZ)炉内传热的三维(3D)全局模拟模型。炉膛内的对流换热、传导换热和辐射换热用有限控制体积法共轭求解。提出了一种2D/3D混合空间离散化技术，提出了CZ加热炉的2D区域和3D区域的概念。这项技术使3D全球模拟能够以适中的计算机内存和计算时间要求进行。进行了二维全局模拟，为三维全局建模提供了良好的初始条件，加快了全局迭代速度。验证了该模型的有效性和合理性。
A novel model for three-dimensional (3D) global simulation of heat transfer in a Czochralski (CZ) furnace for silicon crystal growth was proposed. Convective, conductive and radiative heat transfers in the furnace are solved together in a conjugated way by a finite control-volume method. A mixed 2D/3D space discretization technique was developed, and concepts of 2D domain and 3D domain for a CZ furnace were proposed. This technique enables 3D global simulations to be conducted with moderate requirements of computer memory and computation time. A 2D global simulation was carried out to obtain good initial conditions for 3D global modeling to speed up the global iteration. The model was demonstrated to be valid and reasonable.