Organic contaminants removal by oxygen ECR plasma
Organic contaminants removal by oxygen ECR plasma
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DOI：
10.1016/j.apsusc.2006.07.075
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发表时间：
2007-01-30
影响因子：
6.7
通讯作者：
Kim, Sookjoo
中科院分区：
文献类型：
--
作者：
Lee, Chongmu;Kim, Hyoun Woo;Kim, Sookjoo
最近，电子回旋共振（ECR）等离子体已经被探索用于晶片清洗应用，因为已知它比常规等离子体对硅表面的损伤更小。研究了ECR等离子体清洗的有机污染物去除效率和等离子体辐射损伤。在氧ECR等离子体清洗中，将硅表面上的有机污染物去除到检测极限所需的等离子体暴露时间为40 s，但达到最低表面粗糙度所需的等离子体暴露时间为10 s。使用暴露于氧ECR等离子体40 s的Si衬底制成的MOS电容器的漏电流水平为8 × 10（-9）A。通过考虑污染物去除效率和等离子体辐射损伤（或泄漏电流水平）确定的最佳曝光时间为40 s。有机污染物似乎通过氧离子轰击的蒸发机理和与激发的氧原子的化学反应的蒸发机理被去除。(c)2006 Elsevier B. V.保留所有权利。
Recently electron cyclotron resonance (ECR) plasma have been explored for wafer cleaning applications, since it is known to do less damage to silicon surface than conventional plasma. Organic contaminants removal efficiency and plasma radiation damage of the ECR plasma cleaning have been investigated. In oxygen ECR plasma cleaning, the plasma exposure time needed to remove the organic contaminants on the silicon surface down to the detection limit is 40 s, but the one to reach the lowest surface roughness is 10 s. The leakage current level of the MOS capacitor made using the Si substrate exposed to oxygen ECR plasma for 40 s is 8 x 10(-9) A. The optimum exposure time determined by considering the contaminants removal efficiency and the plasma radiation damage (or the leakage current level) is 40 s. Organic contaminants seem to be removed through both sputter-off mechanism by oxygen ion bombardment and evaporation mechanism by chemical reactions with excited oxygen atoms. (c) 2006 Elsevier B.V. All rights reserved.