Magnetization reversal process in Fe/Si (001) single-crystalline film investigated by planar Hall effect
Magnetization reversal process in Fe/Si (001) single-crystalline film investigated by planar Hall effect
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DOI：
10.1088/1674-1056/24/2/027505
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发表时间：
2015-02
影响因子：
1.7
通讯作者：
Jun Ye;Wei He;Boping Hu;Jin Tang;Yongsheng Zhang;Xiang-qun Zhang;Ziyu Chen;Zhaohua Cheng
中科院分区：
文献类型：
--
作者：
Jun Ye;Wei He;Boping Hu;Jin Tang;Yongsheng Zhang;Xiang-qun Zhang;Ziyu Chen;Zhaohua Cheng
A planar Hall effect (PHE) is introduced to investigate the magnetization reversal process in single-crystalline iron film grown on a Si (001) substrate. Owing to the domain structure of iron film and the characteristics of PHE, the magnetization switches sharply in an angular range of the external field for two steps of 90° domain wall displacement and one step of 180° domain wall displacement near the easy axis, respectively. However, the magnetization reversal process near the hard axis is completed by only one step of 90° domain wall displacement and then rotates coherently. The magnetization reversal process mechanism near the hard axis seems to be a combination of coherent rotation and domain wall displacement. Furthermore, the domain wall pinning energy and uniaxial magnetic anisotropy energy can also be derived from the PHE measurement.
