Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors
Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors
复制标题
通过高迁移率场效应晶体管对 100 GHz 辐射进行偏振敏感检测
DOI：
10.1063/1.2957065
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发表时间：
2008
影响因子：
3.2
通讯作者：
W. Gwarek
中科院分区：
文献类型：
--
作者：
M. Sakowicz;J. Łusakowski;K. Karpierz;M. Grynberg;W. Knap;W. Gwarek
研究了GaAs/AlGaAs高电子迁移率场效应晶体管在300 K下探测100 GHz电磁辐射时，辐射线偏振方向与晶体管对称轴夹角α的变化。发现检测信号的角度依赖性为A0 cos 2（α−α0）+C，其中A0、α0和C依赖于晶体管栅极的电极化。这种依赖性被解释为由于两个交叉相移振荡器的激励。数值模拟了晶体管芯片（包括键合线和衬底）对100 GHz辐射的响应。计算结果证实了实验观察到的依赖关系，并表明，这两个振荡器的结果从100 GHz的晶体管阻抗与键合线和基板相关的模式定义的电流的相互作用。
Detection of 100 GHz electromagnetic radiation by a GaAs/AlGaAs high electron mobility field-effect transistor was investigated at 300 K as a function of the angle α between the direction of linear polarization of the radiation and the symmetry axis of the transistor. The angular dependence of the detected signal was found to be A0 cos2(α−α0)+C with A0, α0, and C dependent on the electrical polarization of the transistor gate. This dependence is interpreted as due to excitation of two crossed phase-shifted oscillators. A response of the transistor chip (including bonding wires and the substrate) to 100 GHz radiation was numerically simulated. Results of calculations confirmed experimentally observed dependencies and showed that the two oscillators result from an interplay of 100 GHz currents defined by the transistor impedance together with bonding wires and substrate related modes.