Molecular solid of zinc tetraphenylporphyrin as a model organic semiconductor with a well-defined depletion layer
Molecular solid of zinc tetraphenylporphyrin as a model organic semiconductor with a well-defined depletion layer
复制标题
四苯基卟啉锌分子固体作为具有明确耗尽层的有机半导体模型
DOI：
10.1016/0022-3697(95)00054-2
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发表时间：
1995
影响因子：
4
通讯作者：
K. Yamashita
中科院分区：
文献类型：
--
作者：
Y. Harima;K. Takeda;K. Yamashita
测量了四苯基卟啉锌（ZnTPP）分子固体的电容（C）作为所施加电压（V）、频率和ZnTPP膜厚度的函数。对频率远低于0.1 Hz的1 C2 vs V曲线的分析表明，ZnTPP固体表现出良好的半导体性能，没有任何由于表面状态等引起的复杂性，因此与Al形成几乎理想的肖特基接触。在较高频率下，Al/ZnTPP/Au电池表现出电压无关的电容，其与ZnTPP层的厚度成反比，雅阁平行板电容器模型。这一发现在高频区的解释是一个非常缓慢的空间电荷动力学。此外，在光电流与ZnTPP的膜厚度的变化被解释由形成的耗尽层与90 nm的宽度。
Capacitances (C) of the molecular solids of zinc tetraphenylporphyrin (ZnTPP) are measured as functions of an applied voltage (V), the frequency, and the thickness of the ZnTPP film. The analysis of the 1 C2vs V plots for the frequencies far below 0.1 Hz reveals that the ZnTPP solids behave well as a semiconductor without any complication due to surface states, etc. and thus form an almost ideal Schottky contact with Al. A space charge concentration is evaluated to be 6 × 1016cm−3. At higher frequencies, Al/ZnTPP/Au cells exhibit voltage-independent capacitances, which are inversely proportional to the thickness of the ZnTPP layer in accord with the parallel-plate capacitor model. This finding in the high frequency region is explained in terms of an extremely slow kinetics of space charges. In addition, a change in photocurrent with the film thickness of ZnTPP is explained by the formation of a depletion layer with 90 nm-width.