Loss Increase of (LuNdBi)3(FeAl)5O12 Films Caused by Sputter Etching
Loss Increase of (LuNdBi)3(FeAl)5O12 Films Caused by Sputter Etching
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溅射刻蚀导致(LuNdBi)3(FeAl)5O12薄膜的损耗增加
DOI：
10.1143/jjap.33.6355
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发表时间：
1994
影响因子：
1.5
通讯作者：
Yoshiyuki Naito Yoshiyuki Naito
中科院分区：
文献类型：
--
作者：
H. Yokoi;T. Mizumoto;Takehiro Ida;Kazuki Kozakai Kazuki Kozakai;Yoshiyuki Naito Yoshiyuki Naito
用Ar溅射刻蚀法制备的（LuNdBi）3（FeAl）5O 12（LNB）磁性石榴石薄膜脊形波导与LNB平板波导相比，具有较大的传输损耗。X射线光电子能谱（XPS）是用来调查的化学状态的组成元素存在于表面层中的Ti掩模已被沉积在蚀刻过程中。分析表明，由于Ar+离子轰击引起的Fe化学位移会导致光吸收损耗的增加，从而导致传输损耗的增加。采用沉积在LNB膜上的SiO2掩模代替Ti掩模对于抑制损耗增加是有效的。
Rib waveguides, which are made of magnetic garnet films of composition (LuNdBi)3(FeAl)5O12 (LNB), fabricated by Ar sputter etching have large propagation loss in comparison with LNB slab waveguides. X-ray photoelectron spectroscopy (XPS) is used to investigate chemical states of constituent elements existing in the surface layer where a Ti mask has been deposited during the etching process. The analysis shows that Fe chemical shift due to Ar+ ion bombardment can cause increase in the optical absorption loss, and hence the propagation loss. It is effective for suppressing the loss increase to employ a SiO2 mask deposited onto LNB film instead of a Ti mask.