Molecular Beam Epitaxy of Highly [100]-Oriented β-FeSi2 Films on Lattice-Matched Strained-Si(001) Surface Using Si0.7Ge0.3 Layers
Molecular Beam Epitaxy of Highly [100]-Oriented β-FeSi2 Films on Lattice-Matched Strained-Si(001) Surface Using Si0.7Ge0.3 Layers
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使用 Si0.7Ge0.3 层在晶格匹配应变 Si(001) 表面上进行高度 [100] 取向 β-FeSi2 薄膜的分子束外延
DOI：
10.1143/jjap.43.l957
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发表时间：
2004
影响因子：
1.5
通讯作者：
F. Hasegawa
中科院分区：
文献类型：
--
作者：
Tatsuma Saito;T. Suemasu;Kenji Yamaguchi;K. Mizushima;F. Hasegawa
利用分子束外延（MBE）技术，在晶格匹配的Si（001）表面上生长了具有高度[100]取向的β-FeSi_2连续薄膜。在晶格匹配的Si（001）上生长的β-FeSi 2薄膜即使在高于600°C的温度下生长也不会发生聚集。在500 ~ 720 ℃的整个生长温度范围内，β-FeSi 2（800）峰的ω扫描半峰宽小于Si（001）上生长的薄膜。X射线衍射极图测量表明，即使在晶格匹配的Si（001）上，MBE生长β-FeSi 2薄膜也需要有一层[100]取向的β-FeSi 2模板层。
We have grown highly [100]-oriented β-FeSi2 continuous films on lattice-matched Si(001) surfaces using Si0.7Ge0.3 layers by molecular beam epitaxy (MBE). The β-FeSi2 films grown on the lattice-matched Si(001) did not aggregate even when it was grown at temperatures above 600°C. The omega-scan full width at half maximum of the β-FeSi2(800) peak was smaller than that of the film grown on Si(001) over the entire growth temperature ranging from 500 to 720°C. X-ray diffraction pole figure measurements revealed that a [100]-oriented β-FeSi2 template layer is necessary to obtain [100]-oriented β-FeSi2 films by MBE even on the lattice-matched Si(001).