Correlated states of electrons in wide quantum wells at low fillings: the role of charge distribution symmetry.
Correlated states of electrons in wide quantum wells at low fillings: the role of charge distribution symmetry.
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低填充量宽量子阱中电子的相关态：电荷分布对称性的作用。
DOI：
10.1103/physrevlett.103.046805
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发表时间：
2009
影响因子：
8.6
通讯作者：
M. Shayegan
中科院分区：
文献类型：
--
作者：
Javad Shabani;T. Gokmen;M. Shayegan
在57 nm宽的GaAs量子阱中对电子的磁输运测量表明，低朗道能级填充（nu）下的相关电子态与电子电荷分布的对称性有显著的相关性。密度为1.93 x 10；{11}厘米;{-2}分布对称时，在偶数分母填充nu = 1/4处观察到一个发展中的分数阶量子霍尔态，但当分布不对称时，它迅速消失。在较低密度下，当我们使电荷分布不对称时，我们观察到围绕nu = 1/5分数量子霍尔态的绝缘相迅速加强。
Magnetotransport measurements on electrons confined to a 57-nm-wide, GaAs quantum well reveal that the correlated electron states at low Landau level fillings (nu) display a remarkable dependence on the symmetry of the electron charge distribution. At a density of 1.93 x 10;{11} cm;{-2}, a developing fractional quantum Hall state is observed at the even-denominator filling nu = 1/4 when the distribution is symmetric, but it quickly vanishes when the distribution is made asymmetric. At lower densities, as we make the charge distribution asymmetric, we observe a rapid strengthening of the insulating phases that surround the nu = 1/5 fractional quantum Hall state.