Multi-petahertz electronic metrology
Multi-petahertz electronic metrology
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DOI：
10.1038/nature19821
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发表时间：
2016-10-20
期刊：
影响因子：
64.8
通讯作者：
Goulielmakis, E.
中科院分区：
文献类型：
--
作者：
Garg, M.;Zhan, M.;Goulielmakis, E.
与在固体的电子带中移动的电荷载流子相关的电流的频率决定了电子学的速度极限，从而决定了信息和信号处理的速度极限。使用光场来驱动电子有望获得比传统使用的频率高得多的频率，因为电流可以在比固体中电荷载流子的量子失相更快的时间尺度上感应和操纵（2）。这形成了人造超晶格（2）中太赫兹（10（12）赫兹）电子学的基础，并实现了基于光的开关（3-5）和频率高达几百太赫兹的电流采样。在这里，我们展示了电子计量的扩展到多拍赫兹（10（15）赫兹）的频率范围。我们使用单周期强光场（约1伏/埃）驱动二氧化硅块体中的电子运动，然后通过使用阿秒（10（-18）秒）条纹（6，7）来探测其动力学，以映射出现的孤立阿秒极紫外瞬变及其光学驱动器的时间结构。这些数据建立了极紫外线辐射的发射与光诱导的带内相位相干电流之间的紧密联系，这些电流的频率高达约8 petahertz，并且能够获得二氧化硅的动态非线性电导率。在阿秒时间尺度上直接探测、限制和控制固体内部带内电流的波形，建立了一种实现多千兆赫相干电子学的方法。我们希望这项技术能够在原子尺度上探索电子动力学和凝聚态物质结构之间的相互作用。
The frequency of electric currents associated with charge carriers moving in the electronic bands of solids determines the speed limit of electronics and thereby that of information and signal processing(1). The use of light fields to drive electrons promises access to vastly higher frequencies than conventionally used, as electric currents can be induced and manipulated on timescales faster than that of the quantum dephasing of charge carriers in solids(2). This forms the basis of terahertz (10(12) hertz) electronics in artificial superlattices(2), and has enabled light-based switches(3-5) and sampling of currents extending in frequency up to a few hundred terahertz. Here we demonstrate the extension of electronic metrology to the multi-petahertz (10(15) hertz) frequency range. We use single-cycle intense optical fields (about one volt per angstrom) to drive electron motion in the bulk of silicon dioxide, and then probe its dynamics by using attosecond (10(-18) seconds) streaking(6,7) to map the time structure of emerging isolated attosecond extreme ultraviolet transients and their optical driver. The data establish a firm link between the emission of the extreme ultraviolet radiation and the light-induced intraband, phase-coherent electric currents that extend in frequency up to about eight petahertz, and enable access to the dynamic nonlinear conductivity of silicon dioxide. Direct probing, confinement and control of the waveform of intraband currents inside solids on attosecond timescales establish a method of realizing multi-petahertz coherent electronics. We expect this technique to enable new ways of exploring the interplay between electron dynamics and the structure of condensed matter on the atomic scale.