Terrace-width-induced domain transition on vicinal Si(100) studied with microprobe diffraction.
Terrace-width-induced domain transition on vicinal Si(100) studied with microprobe diffraction.
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用微探针衍射研究了邻位 Si(100) 上的平台宽度诱导的畴变。
DOI：
10.1103/physrevlett.67.101
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发表时间：
1991
影响因子：
8.6
通讯作者：
Bennett
中科院分区：
文献类型：
--
作者：
Tong;Bennett
我们已经使用微探针RHEED和凸曲面衬底来研究平衡表面结构对相邻Si的阶梯宽度依赖性（001）。我们观察到在周期性[110]阶跃阵列中2×1重构从双畴到单畴的转变，这种转变在0 ~ 5°c的错切角范围内逐渐发生，并且与500 ~ 800℃测量范围内的温度无关。本文描述了这种转变的可能机制及其与阶跃高度转变的关系
We have used microprobe RHEED and a convex curved substrate to study the terrace-width dependence dence of equilibrium surface structures on vicinal Si(001). We observe a transition from double to single domains of the 2×1 reconstruction in periodic [110] step arrays that occurs gradually over a range oC miscut angle from 0 o to 5 o , and is independent of temperature over the measured range of 500-800 o C. Possible mechanisms for this transition and its relation to a transition in step heights are described