Large area single crystal (0001) oriented MoS2
Large area single crystal (0001) oriented MoS2
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DOI：
10.1063/1.4811410
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发表时间：
2013-06-24
影响因子：
4
通讯作者：
Rajan, Siddharth
中科院分区：
文献类型：
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作者：
Laskar, Masihhur R.;Ma, Lu;Rajan, Siddharth
层状金属二硫属化物材料是一类半导体，具有广泛的能带隙和特性，具有令人兴奋的物理和技术应用的潜力。然而，在大面积上获得高晶体质量的薄膜仍然是一个挑战。在这里，我们展示了化学气相沉积（CVD）可用于获得大面积单晶二硫化钼（MoS2）薄膜。研究发现，生长温度和衬底的选择对薄膜生长的质量有很大影响，(0001) 取向蓝宝石上的高温生长产生了高度取向的单晶 MoS2 薄膜。高分辨率 X 射线衍射、透射电子显微镜和拉曼测量发现，在最佳条件下生长的薄膜具有高结构质量，接近参考地质 MoS2 的质量。光致发光和电测量证实了具有低背景载流子浓度和高迁移率的光学活性MoS2的生长。本文报道的用于生长高质量 MoS2 薄膜的 CVD 方法为生长各种层状二维硫族化物半导体及其异质结构铺平了道路。 (C) 2013 AIP 出版有限责任公司。
Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, the potential for exciting physics and technology applications. However, obtaining high crystal quality thin films over a large area remains a challenge. Here we show that chemical vapor deposition (CVD) can be used to achieve large area single crystal Molybdenum Disulfide (MoS2) thin films. Growth temperature and choice of substrate were found to critically impact the quality of film grown, and high temperature growth on (0001) oriented sapphire yielded highly oriented single crystal MoS2 films. Films grown under optimal conditions were found to be of high structural quality from high-resolution X-ray diffraction, transmission electron microscopy, and Raman measurements, approaching the quality of reference geological MoS2. Photoluminescence and electrical measurements confirmed the growth of optically active MoS2 with a low background carrier concentration, and high mobility. The CVD method reported here for the growth of high quality MoS2 thin films paves the way towards growth of a variety of layered 2D chalcogenide semiconductors and their heterostructures. (C) 2013 AIP Publishing LLC.