Method for Equalizing Switching Loss of MOSFETs Caused by the Wiring Structure Connected in Parallel
Method for Equalizing Switching Loss of MOSFETs Caused by the Wiring Structure Connected in Parallel
复制标题
并联布线结构引起的MOSFET开关损耗的均衡方法
DOI：
10.1541/ieejias.129.622
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
T. Ohi
中科院分区：
文献类型：
--
作者：
T. Okuda;T. Urakabe;T. Ohi
功率半导体器件周围的电磁场环境非常重要。这是因为它可能会影响开关速度，从而影响器件的开关损耗。由于器件的切换引起的电磁感应导致器件的栅极电压的变化。开关期间栅极电压的这种变化会导致短路电流急剧增加，并且当多个器件并联连接时会导致开关损耗集中。本文利用三维电磁场分析和电路模拟描述了功率半导体器件的布线结构对其开关特性的影响。本文还介绍了改善主电路和控制电路接线结构引起的开关问题的方法。
The electromagnetic field environment around a power semiconductor device is extremely important. This is because it can potentially affect the switching speed and thereby the switching loss of the device. Electromagnetic induction due to switching of devices causes a change in the gate voltage of the devices. This change in the gate voltage during the switching period causes drastic increase in current at short circuit and concentration of switching loss when many devices are connected in parallel.In this paper, we describe the influence of the wiring structure of power semiconductor devices on their switching characteristics using three-dimensional electromagnetic field analysis and circuit simulation. We also describe methods to improve the switching problems caused by the wiring structure of the main circuit and control circuit.