Doping profile measurement on textured silicon surface
Doping profile measurement on textured silicon surface
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纹理硅表面的掺杂分布测量
DOI：
10.1051/epjpv/2018001
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
M. Quillec
中科院分区：
文献类型：
--
作者：
Z. Essa;N. Taleb;B. Sermage;C. Broussillou;B. Bazer;M. Quillec
在晶体硅太阳能电池中，前表面被纹理化以降低入射光的反射并提高电池的效率。这种尺寸为几微米宽和高的纹理通常使得难以确定掺杂分布测量。我们已经测量了二次离子质谱（西姆斯）和电化学电容电压剖面注入磷在碱性织构和抛光单晶硅片的掺杂分布。结果表明，只要一次离子入射角足够小，西姆斯能给出准确的结果。此外，这两种技术之间的比较给出了电惰性磷原子的浓度的估计。
In crystalline silicon solar cells, the front surface is textured in order to lower the reflection of the incident light and increase the efficiency of the cell. This texturing whose dimensions are a few micrometers wide and high, often makes it difficult to determine the doping profile measurement. We have measured by secondary ion mass spectrometry (SIMS) and electrochemical capacitance voltage profiling the doping profile of implanted phosphorus in alkaline textured and in polished monocrystalline silicon wafers. The paper shows that SIMS gives accurate results provided the primary ion impact angle is small enough. Moreover, the comparison between these two techniques gives an estimation of the concentration of electrically inactive phosphorus atoms.