AlGaAs heterojunction visible (700 nm) light‐emitting diodes on Si substrates fabricated by metalorganic chemical vapor deposition
AlGaAs heterojunction visible (700 nm) light‐emitting diodes on Si substrates fabricated by metalorganic chemical vapor deposition
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金属有机化学气相沉积法在硅衬底上制备 AlGaAs 异质结可见光（700 nm）发光二极管
DOI：
10.1063/1.96835
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发表时间：
1986
影响因子：
4
通讯作者：
M. Sakuta
中科院分区：
文献类型：
--
作者：
A. Hashimoto;Y. Kawarada;T. Kamijoh;M. Akiyama;N. Watanabe;M. Sakuta
利用金属有机化学气相沉积技术在硅衬底上成功制备了AlGaAs可见光表面发光二极管（LED）。LED的发射光谱在室温下在100 mA的正向电流下在700 nm处达到峰值，半宽为45 nm。外部效率为0.3%。
AlGaAs visible surface light‐emitting diodes (LED’s) on silicon substrates have been successfully fabricated by use of the metalorganic chemical vapor deposition technique. The emission spectrum of the LED peaked at 700 nm with a half‐width of 45 nm at the forward current of 100 mA at room temperature. The external efficiency was 0.3%.