High-Performance Solution-Processed Low-Voltage Polymer Thin-Film Transistors With Low-k/High-k Bilayer Gate Dielectric
High-Performance Solution-Processed Low-Voltage Polymer Thin-Film Transistors With Low-k/High-k Bilayer Gate Dielectric
复制标题
具有低 k/高 k 双层栅极电介质的高性能溶液处理低压聚合物薄膜晶体管
DOI：
10.1109/led.2015.2462833
复制
发表时间：
2015-09-01
影响因子：
4.9
通讯作者：
Guo, Xiaojun
中科院分区：
文献类型：
--
作者：
Tang, Wei;Li, Jinhua;Guo, Xiaojun
Solution-processed low-voltage organic thin-film transistors (OTFTs) were fabricated using the high-mobility donor-acceptor copolymer semiconductor indacenodithiophene-co-benzothiadiazole (IDTBT) and large permittivity (high-k) relaxor ferroelectric polymer poly (vinylidene fluoride-trifluoroethylene-chlorofloroethylene). It is shown that, with the face-on molecule packing in as-deposited IDTBT films, the close interfacing between the backbone and the dielectric layer causes significant mobility degradation of the fabricated OTFTs due to dipole effects. By inserting a thin, low-polar dielectric layer between the high-k one and the channel, the dipole field can be effectively screened and the devices present a high mobility similar to that of previously reported high-voltage IDTBT OTFTs. With the bilayer gate dielectric and the IDTBT semiconductor, low-voltage OTFTs are achieved with the average mobility of 1.4 cm(2)/V . s and ON/OFF-current ratio larger than 10(6), which is among the best reported performance so far for solution processed low-voltage OTFTs.
