AlN-based hybrid thin films with self-assembled plasmonic Au and Ag nanoinclusions
AlN-based hybrid thin films with self-assembled plasmonic Au and Ag nanoinclusions
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DOI：
10.1063/1.5083950
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发表时间：
2019-01
影响因子：
4
通讯作者：
Xuejing Wang;T. Nguyễn;Yang Cao;J. Jian;O. Malis;Haiyan Wang
中科院分区：
文献类型：
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作者：
Xuejing Wang;T. Nguyễn;Yang Cao;J. Jian;O. Malis;Haiyan Wang
采用一步薄膜生长法制备了含有等离子体Au和Ag纳米夹杂物的氮化铝（AlN）基两相纳米复合薄膜。这样的AlN基纳米复合材料，同时保持其宽带隙半导体行为，目前可调的光学性能，如带隙，等离子体共振，和复杂的介电函数。取决于生长气氛，金属纳米夹杂物自组织成不同的几何形状，如纳米枝晶，纳米盘，和纳米粒子，提供增强的光学各向异性的平面内和平面外。红外透射测量表明AlN的特征峰以及归因于等离子体纳米夹杂物的宽透射窗口。这种独特的氮化铝-金属混合薄膜平台提供了一种途径，以调制宽带隙III-V族氮化物半导体的红外传感或全光为基础的集成电路的光学响应。氮化铝（AlN）为基础的两相纳米复合薄膜与等离子体Au和Ag纳米夹杂物已被证明使用一步薄膜生长方法。这样的AlN基纳米复合材料，同时保持其宽带隙半导体行为，目前可调的光学性能，如带隙，等离子体共振，和复杂的介电函数。取决于生长气氛，金属纳米夹杂物自组织成不同的几何形状，如纳米枝晶，纳米盘，和纳米粒子，提供增强的光学各向异性的平面内和平面外。红外透射测量表明AlN的特征峰以及归因于等离子体纳米夹杂物的宽透射窗口。这种独特的AlN-金属混合薄膜平台提供了一种调制宽带隙III-V族氮化物半导体对红外传感或基于全光学的集成电路的光学响应的途径。
Aluminum nitride (AlN)-based two-phase nanocomposite thin films with plasmonic Au and Ag nanoinclusions have been demonstrated using a one-step thin film growth method. Such AlN-based nanocomposites, while maintaining their wide bandgap semiconductor behavior, present tunable optical properties such as bandgap, plasmonic resonance, and complex dielectric function. Depending on the growth atmosphere, the metallic nanoinclusions self-organized into different geometries, such as nano-dendrites, nano-disks, and nanoparticles, providing enhanced optical anisotropy in-plane and out-of-plane. The infrared transmission measurements demonstrate the signature peaks of AlN as well as a broad transmission window attributed to the plasmonic nanoinclusions. This unique AlN-metal hybrid thin film platform provides a route to modulate the optical response of wide bandgap III-V nitride semiconductors towards infrared sensing or all optical based integrated circuits.Aluminum nitride (AlN)-based two-phase nanocomposite thin films with plasmonic Au and Ag nanoinclusions have been demonstrated using a one-step thin film growth method. Such AlN-based nanocomposites, while maintaining their wide bandgap semiconductor behavior, present tunable optical properties such as bandgap, plasmonic resonance, and complex dielectric function. Depending on the growth atmosphere, the metallic nanoinclusions self-organized into different geometries, such as nano-dendrites, nano-disks, and nanoparticles, providing enhanced optical anisotropy in-plane and out-of-plane. The infrared transmission measurements demonstrate the signature peaks of AlN as well as a broad transmission window attributed to the plasmonic nanoinclusions. This unique AlN-metal hybrid thin film platform provides a route to modulate the optical response of wide bandgap III-V nitride semiconductors towards infrared sensing or all optical based integrated circuits.