Magneto-optical and magnetotransport properties of heavily Mn-doped GaMnAs
Magneto-optical and magnetotransport properties of heavily Mn-doped GaMnAs
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DOI：
10.1063/1.2713176
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发表时间：
2006-12
影响因子：
4
通讯作者：
S. Ohya;K. Ohno;Masaaki Tanaka
中科院分区：
文献类型：
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作者：
S. Ohya;K. Ohno;Masaaki Tanaka
研究了用分子束外延生长的高Mn浓度（x=12.2%-21.3%）Ga_（1 − x）Mn_xAs薄膜的磁光和磁输运特性。这些重Mn掺杂的GaMnAs薄膜是通过将生长温度降低到低至150-190°C并且将膜厚度减小到10 nm以防止六方MnAs团簇的沉淀来形成的。磁性圆二色性和反常霍尔效应的测量表明，这些GaMnAs薄膜具有本征铁磁半导体的性质，具有高达170 K的铁磁转变温度。
The authors have studied the magneto-optical and magnetotrasnport properties of Ga1−xMnxAs thin films with high Mn concentrations (x=12.2%–21.3%) grown by molecular-beam epitaxy. These heavily Mn-doped GaMnAs films were formed by decreasing the growth temperature to as low as 150–190°C and by reducing the film thickness to 10nm in order to prevent precipitation of hexagonal MnAs clusters. Magnetic circular dichroism and anomalous Hall effect measurements indicate that these GaMnAs films have the nature of intrinsic ferromagnetic semiconductors with high ferromagnetic transition temperature up to 170K.