Large single-domain growth of monolayer WS2 by rapid-cooling chemical vapor deposition
Large single-domain growth of monolayer WS2 by rapid-cooling chemical vapor deposition
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DOI：
10.7567/apex.10.075201
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发表时间：
2017-06
影响因子：
2.3
通讯作者：
C. Li;Yoshiki Yamaguchi;T. Kaneko;Toshiaki Kato
中科院分区：
文献类型：
--
作者：
C. Li;Yoshiki Yamaguchi;T. Kaneko;Toshiaki Kato
通过在传统的化学气相沉积（CVD）工艺中引入快速冷却阶段，发展了一种制备大尺寸单层和单晶二硫化钨（WS2）的新方法。通过调整快速冷却CVD过程中的生长参数，WS2单晶的最大尺寸可以增加到320 µm。这是在绝缘衬底上直接生长的最大尺寸的单晶过渡金属二硫属化物之一。一个理论模型表明，WS2尺寸的增加可以解释由增强的成核概率和生长速度，所造成的额外的前体在快速冷却过程中提供。
A novel method for the synthesis of large monolayer and single-crystal tungsten disulfide (WS2) has been developed by introducing a rapid-cooling stage to the conventional chemical vapor deposition (CVD). The maximum size of single-crystal WS2 can be increased up to 320 µm by adjusting the growth parameters during the rapid-cooling CVD. This is one of the largest sizes of single-crystal transition metal dichalcogenides directly grown on an insulating substrate. A theoretical model reveals that the increase in WS2 size can be explained by the enhanced nucleation probability and the growth velocity, caused by the additional precursors supplied during the rapid cooling.