Development of monolithic SOI pixel sensors capable of fine measurements of space and time
Development of monolithic SOI pixel sensors capable of fine measurements of space and time
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开发能够精细测量空间和时间的单片 SOI 像素传感器
DOI:
10.1016/j.nima.2020.164417
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发表时间:
2020
期刊:
影响因子:
--
通讯作者:
Yamada
中科院分区:
文献类型:
--
作者:
Murayama Hitoshi;Hara Kazuhiko;Yamauchi Hiroki;Abe Ryuhei;Iwanami Shikie;Watanabe Kevin;Okada Yui;Tsuboyama Toru;Arai Yasuo;Miyoshi Toshinobu;Kurachi Ikuo;Haba Junji;Togawa Manabu;Ikegami Yoichi;Nishimura Ryutaro;Ishikawa Akimasa;Ono Shun;Li Taohan;Yamada
Abstract Silicon-on-insulator (SOI) for fine measurement of space and time (SOFIST) is designed taking full advantage of advanced SOI monolithic pixel detector fabrication technology to record the charge and time information of hit pixels. The aim is to achieve 3 μ m position resolution and ultimately identify the International Linear Collider beam bunches of 554 ns separation. SOFIST Ver. 3 includes full circuits to read out the charge and time for each pixel of size 30× 30 μ m. Its performance is evaluated using a 120 GeV proton beam. The time resolution is evaluated to be 1.92 μ s (including calibration error), with an intrinsic time resolution of 1.34–1.55 μ s. Additionally, multi-memory readout functionality is successfully examined. With SOFIST Ver. 4, the same functionality is to be realized with a 20× 20 μ m pixel size by 3D stacking. The first chip was successfully tested to image β rays. The connection yield of Au micro-bumps is greater than 99.9%.