Nanoscale patterning of (La, Pr,Ca)MnO3 thin film using atomic force microscopy lithography and their electrical properties
Nanoscale patterning of (La, Pr,Ca)MnO3 thin film using atomic force microscopy lithography and their electrical properties
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DOI：
10.1063/1.2402031
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发表时间：
2006-12
影响因子：
3.2
通讯作者：
Y. Yanagisawa;Motoyuki Hirooka;Hidekazu Tanaka;T. Kawai
中科院分区：
文献类型：
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作者：
Y. Yanagisawa;Motoyuki Hirooka;Hidekazu Tanaka;T. Kawai
采用原子力显微镜（AFM）光刻技术制备了（La，Pr，Ca）MnO 3（LPCMO）薄膜。结果发现，10.5nm的最大图案高度的沉积膜是远远高于5.3nm的退火膜，这表明LPCMO薄膜的AFM光刻是高度影响氧的非化学计量比，增强离子迁移。利用该技术制备了宽度为150 nm的纳米通道。该纳米结构在H= 0 T时表现出绝缘行为，在5 T降温和升温时表现出较大的滞后行为，金属-绝缘体转变温度Tp分别为140和170 K。相比之下，未图案化的膜具有Tp= 170 K（H= 0 T）和240 K（H= 5 T）而没有大的滞后行为。纳米通道和未图案化的膜之间的差异可以与电子相分离有关。
We have applied the atomic force microscopy (AFM) lithography technique to electrically phase-separated (La,Pr,Ca)MnO3 (LPCMO) thin films. It was found that the maximum pattern height of 10.5nm for the as-deposited film was much higher than that of 5.3nm for the annealed film, suggesting that AFM lithography of LPCMO thin film was highly influenced by oxygen nonstoichiometry that enhances ion migration. The nanochannel with 150nm width was fabricated using this technique. The nanostructure shows insulating behavior under H=0T and large hysteretic behavior accompanied with metal-insulator transition temperature Tp=140 and 170K upon cooling and warming under 5T. In contrast, the unpatterned film has Tp=170K (H=0T) and 240K (H=5T) without large hysteretic behavior. The difference between the nanochannel and the unpatterned film can be related to the electronic phase separation.