Crystal and faceted dendrite growth of silicon near (100)
Crystal and faceted dendrite growth of silicon near (100)
复制标题
(100) 附近硅的晶体和多面枝晶生长
DOI：
10.1016/j.actamat.2012.03.010
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发表时间：
2012
期刊：
影响因子：
9.4
通讯作者：
S.Uda
中科院分区：
文献类型：
--
作者：
Xinbo Yang;K.Fujiwara;R.Gotoh;K.Maeda;J.Nozawa;H.Koizumi;S.Uda
用原位观察的方法观察了硅在（100）面附近的晶体生长形态（CGS）和小面枝晶生长。研究了不同过冷度（ΔT）条件下CGS上小平面和弯曲取向的形态变化，阐明了小平面枝晶的生长机制。(110)在硅CGS的形成过程中，晶体上观察到生长速度较低的小面和生长速度相对较高的（100）曲面界面，表现出以（110）小面为主的完美四边形。在较高的ΔT下，CGS的（110）面出现了尖端平坦的小面枝晶。（100）弯曲界面随着曲率的减小而消失。随着ΔT的增加，小面和弯曲界面的生长速度均呈线性增加，曲率减小的速率增大。本文用二维图象阐明了（100）面附近硅单晶110面枝晶的生长机制。
The crystal growth shape (CGS) and faceted dendrite growth of silicon near (100) are observed by in situ observation. The morphological transformations of the facets and curved orientations on the CGSs under different undercoolings (ΔT) are investigated, and the growth mechanism of the faceted dendrite is clarified. (110) facets with a low growth velocity and (100) curved interface with a relatively high growth velocity are observed on the crystal during the formation of silicon CGS, which shows a perfect foursquare shape dominated by (110) facets. At a relatively high ΔT, a faceted dendrite with a flat tip appears at the (110) facet of CGS. The (100) curved interface disappears with decreasing curvature. With increasing ΔT, both facet and curved interface growth velocities increase linearly, and the rate of curvature decrease increases. A two-dimensional image is developed to elucidate the growth mechanism of silicon 〈110〉 faceted dendrites near (100).