Linear integrated optics in 3C silicon carbide.
Linear integrated optics in 3C silicon carbide.
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DOI：
10.1364/oe.25.010735
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发表时间：
2017-05
期刊：
影响因子：
3.8
通讯作者：
F. Martini;A. Politi
中科院分区：
文献类型：
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作者：
F. Martini;A. Politi
需要开发联合收割机结合不同光学性能的新光子材料，以促进不同量子和经典组件在同一芯片内的集成。在所有候选材料中，立方碳化硅（3C SiC）的上级光学特性可以与其晶体点缺陷相结合，从而在单个器件上实现单光子产生、操纵和光-物质相互作用。在SiC中的光子器件的发展受到硅衬底的限制，在硅衬底上异质外延生长薄的晶体膜。通过在材料制造中采用新的方法，我们展示了耦合效率达到-6 dB的光栅耦合器，亚微米波导和高固有品质因数（高达24，000）环形谐振器。这些组件是线性光网络的基础，也是开发广泛的非线性和量子光学光子组件的关键。
The development of new photonic materials that combine diverse optical capabilities is needed to boost the integration of different quantum and classical components within the same chip. Amongst all candidates, the superior optical properties of cubic silicon carbide (3C SiC) could be merged with its crystalline point defects, enabling single photon generation, manipulation and light-matter interaction on a single device. The development of photonics devices in SiC has been limited by the presence of the silicon substrate, over which thin crystalline films are heteroepitaxially grown. By employing a novel approach in the material fabrication, we demonstrate grating couplers with coupling efficiency reaching -6 dB, sub-µm waveguides and high intrinsic quality factor (up to 24,000) ring resonators. These components are the basis for linear optical networks and essential for developing a wide range of photonics component for non-linear and quantum optics.