Control of Schottky barrier heights by inserting thin dielectric layers
Control of Schottky barrier heights by inserting thin dielectric layers
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DOI：
10.1063/1.4764521
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发表时间：
2012-10
影响因子：
4
通讯作者：
L. Lin;H. Li;J. Robertson
中科院分区：
文献类型：
--
作者：
L. Lin;H. Li;J. Robertson
超薄介电层插入到较低的n型肖特基势垒高度，部分涉及到创建一个净界面偶极子，以及通过抑制金属诱导的间隙态来解除费米能级。净偶极子的存在要求在两个界面处没有偶极子抵消。这需要在两个界面处有不同的金属(Ge)-O键密度，通常需要不同的氧化学势。这将需要插入的电介质成为扩散屏障，而不仅仅是能够产生偶极子，这有利于使用基于al2o3或氮化的电介质。
The insertion of ultra-thin dielectric layers to lower n-type Schottky barrier heights is shown to partly involve the creation of a net interfacial dipole as well as unpinning of the Fermi level by suppression of metal-induced gap states. The existence of a net dipole requires a lack of cancellation of dipoles at the two interfaces. This requires a different metal(Ge)-O bond density at the two interfaces, in general requiring differing oxygen chemical potentials. This would need the inserted dielectric to be a diffusion barrier, not just able to create dipoles, favoring the use of Al2O3-based or nitrided dielectrics.