Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes
Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes
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DOI：
10.1049/el.2012.0849
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发表时间：
2012-05-10
影响因子：
1.1
通讯作者：
Arai, S.
中科院分区：
文献类型：
--
作者：
Ishigaki, K.;Shiraishi, M.;Arai, S.
报道了太赫兹振荡谐振隧穿二极管的直接强度调制和无线数据传输特性。演示了RTD振荡器的直接强度调制，并测量了频率响应。研究发现，3db截止调制频率受到外电路寄生元件的限制，通过减少寄生元件，3db截止调制频率提高到4.5 GHz。采用振荡频率为542 GHz，截止频率为1.1 GHz的RTD，演示了直接移幅键控无线数据传输。当比特率为2 Gbit/s和3gbit /s时，ber分别为2 × 10（-8）和3 × 10（-5）。
Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes (RTDs) is reported. A direct intensity modulation of the RTD oscillators was demonstrated, and the frequency response was measured. It was found that the 3 dB cutoff modulation frequency was limited by the parasitic elements of the external circuit, and increased up to 4.5 GHz by reducing such parasitic elements. Wireless data transmission by direct amplitude shift keying was demonstrated using an RTD oscillating at 542 GHz with cutoff frequency of 1.1 GHz. The BERs for bit rates of 2 and 3 Gbit/s were found to be 2 x 10(-8) and 3 x 10(-5), respectively.