Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200 K
Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200 K
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DOI：
10.1063/1.4894729
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发表时间：
2014-09
影响因子：
4
通讯作者：
Wolf-Alexander Quitsch-;T. Kümmell;A. Gust;C. Kruse;D. Hommel;G. Bacher
中科院分区：
文献类型：
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作者：
Wolf-Alexander Quitsch-;T. Kümmell;A. Gust;C. Kruse;D. Hommel;G. Bacher
报道了基于单外延量子点的电驱动单光子发射器的高温工作。CdSe/ZnSSe/MgS量子点嵌入到p-i-n二极管结构中，通过顶部接触中的孔从各个量子点提供几乎无背景的激子和双激子电致发光。具有g2（τ = 0）= 0.28 ± 0.20的清晰的反聚束可以被跟踪到T = 200 K，这代表了来自单个量子点器件的电触发单光子发射的最高温度。
High temperature operation of an electrically driven single photon emitter based on a single epitaxial quantum dot is reported. CdSe/ZnSSe/MgS quantum dots are embedded into a p-i-n diode architecture providing almost background free excitonic and biexcitonic electroluminescence from individual quantum dots through apertures in the top contacts. Clear antibunching with g2(τ = 0) = 0.28 ± 0.20 can be tracked up to T = 200 K, representing the highest temperature for electrically triggered single photon emission from a single quantum dot device.