Maskless lithography: a low-energy electron-beam direct writing system with a common CP aperture and the recent progress
Maskless lithography: a low-energy electron-beam direct writing system with a common CP aperture and the recent progress
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无掩模光刻：共CP孔径的低能电子束直写系统及最新进展
DOI：
10.1117/12.483607
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
A. Miura
中科院分区：
文献类型：
--
作者：
T. Nakasugi;A. Ando;R. Inanami;N. Sasaki;T. Ota;Osamu Nagano;Y. Yamazaki;K. Sugihara;I. Mori;M. Miyoshi;K. Okumura;A. Miura
为了以低成本和快速 TAT（周转时间）实现 SoC（片上系统）制造，我们提出了无掩模光刻（ML2）策略，即具有公共字符投影（CP）孔径的低能电子束直写（LEEBDW）系统。本文介绍了我们的概念验证 (POC) 系统的状态报告。我们开发了一种紧凑型 EB 镜筒，由小型静电透镜和偏转器组成。我们的POC系统的实验结果表明，在5 keV的入射能量下进行CP曝光可以获得与50nm节点逻辑器件相对应的图案。还报道了使用 LEEBDW 系统的 SEM 功能来减少原始处理时间的技术。
In order to realize SoC (System on a Chip) fabrication at low cost with quick-TAT (Turn-Around-Time) we have proposed a maskless lithography (ML2) strategy, a low-energy electron-beam direct writing (LEEBDW) system with a common character projection (CP) aperture. This paper presents a status report on our proof-of-concept (POC) system. We have developed a compact EB column consisting small electrostatic lenses and deflectors. The experimental results for our POC system indicated that the patterns corresponding to 50nm-node logic devices can be obtained with CP exposure at the incident energy of 5 keV. The technique to reduce the raw process time using a SEM function of LEEBDW system is also reported.