Study of Transient Electroluminescence Process Using Organic Light-Emitting Diode with Partial Doping Layer
Study of Transient Electroluminescence Process Using Organic Light-Emitting Diode with Partial Doping Layer
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DOI：
10.1143/jjap.45.3721
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发表时间：
2006-04
影响因子：
1.5
通讯作者：
H. Kajii;Kazuya Takahashi;Ju-Seung Kim;Y. Ohmori
中科院分区：
文献类型：
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作者：
H. Kajii;Kazuya Takahashi;Ju-Seung Kim;Y. Ohmori
研究了在三（8-羟基喹啉）铝（Alq 3）不同区域掺杂0.05 nm厚的4-（二氰亚甲基）-2-异丙基-6-（1，1，7，7-四甲基久洛尼啶基-9-烯基）-4H-吡喃（DCJTI）部分掺杂层的有机电致发光器件（OLED）的瞬态特性。对于在二胺和Alq 3之间的界面处具有0.05 nm厚的DCJTI部分掺杂层的器件，激子被限制在界面的窄区域内。所有器件的最大亮度均超过30，000 cd/m2。发现了主客体分子间不同的瞬态行为，在620 nm处的瞬态电致发光波形与520 nm处的瞬态电致发光波形相比有一个初始过冲峰。在二胺和Alq 3层之间的界面处具有DCJTI部分掺杂层的OLED由于累积的电荷和窄的发射区域而显示出比在Alq 3层中具有DCJTI部分掺杂层的OLED更高的初始过冲峰值和更快的衰减时间。
The transient properties of the organic light-emitting diodes (OLEDs) with a 0.05-nm-thick 4-(dicyanomethylene)-2-i-propyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTI) partial doping layer in different regions of tris(8-hydroxyquinoline) aluminum (Alq3) were examined. For the device with a 0.05-nm-thick DCJTI partial doping layer at the interface between the diamine and Alq3, excitons are confined within the narrow region of the interface. The maximum luminance of more than 30,000 cd/m2 was obtained from all devices. Different transient behaviors between host and guest molecules were found. The transient electroluminescence waveform at 620 nm has an initial overshooting peak compared with that at 520 nm. An OLED with a DCJTI partial doping layer at the interface between the diamine and Alq3 layers shows a higher initial overshooting peak and faster decay time due to the accumulated charges and the narrow emission regions than the OLEDs with a DCJTI partial doping layer in the Alq3 layer.