Influence of Schottky and Poole-Frenkel emission on the retention property of YMnO3-based metal/ferroelectric/insulator/semiconductor capacitors
Influence of Schottky and Poole-Frenkel emission on the retention property of YMnO3-based metal/ferroelectric/insulator/semiconductor capacitors
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DOI：
10.1063/1.1601292
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发表时间：
2003-09-15
影响因子：
3.2
通讯作者：
Ito, T
中科院分区：
文献类型：
--
作者：
Ito, D;Fujimura, N;Ito, T
讨论了Pt/YMnO 3/Y2 O3/Si电容器的存储保持性能与漏电流密度的关系。铁电YMnO 3层的漏电流随温度和退火电容器而变化。发现当增加在保持电压下的漏电流密度时，保持时间变短。当漏电流密度降低到2 × 10（-9）A/cm（2）时，在氮气保护下退火，保留时间从10（3）s延长到10（4）s。漏电流的分析表明，保留退化机制与肖特基发射有关。从漏电流的温度依赖性和伪等温电容瞬态谱，它被发现，施加电压与不必要的长时间，以使铁电层产生Frenkel缺陷的铁电层，和缺陷的量极大地影响存储器的保持时间。这些结果表明，为了提高存储器保持性能，降低铁电层的缺陷密度是重要的，以及降低肖特基电流。(C)2003年，美国物理学会。
The relationship between the memory retention properties and the leakage current density of Pt/YMnO3/Y2O3/Si capacitors was discussed. The leakage current of the ferroelectric YMnO3 layer was varied by temperature and by annealing the capacitors. It was found that the retention time became shorter upon increasing the leakage current density at the retention voltage. The retention time was prolonged from about 10(3) to up to 10(4) s when the leakage current density was reduced to 2 x 10(-9) A/cm(2) by annealing under N-2 ambient. The analysis of the leakage current revealed that the retention degradation mechanism was related to the Schottky emission. From the temperature dependence of the leakage current and the pseudo isothermal capacitance transient spectrum, it was found that applied voltage with an unnecessarily long time to polarize the ferroelectric layer generated Frenkel defects in the ferroelectric layer, and that the amount of the defects greatly affected the memory retention time. These results suggest that to improve the memory retention properties, reducing the defect density of the ferroelectric layer is important, as well as lowering the Schottky current. (C) 2003 American Institute of Physics.