Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication
Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication
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DOI：
10.1364/oe.26.007920
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发表时间：
2018-04-02
期刊：
影响因子：
3.8
通讯作者：
Hochberg, Michael
中科院分区：
文献类型：
--
作者：
Guan, Hang;Novack, Ari;Hochberg, Michael
我们在绝缘体上的硅平台上展示了一个在c波段调谐范围大于60 nm的III-V/硅混合外腔激光器。通过Si3N4光斑尺寸转换器将III-V型半导体增益芯片与硅片进行边耦合，将其杂化到硅片中。所演示的包装方法只需要被动对准，因此适合大批量生产。该激光器的最大输出功率为11 mW，最大壁插效率为4.2%，可调性为60 nm（超过覆盖c波段），侧模抑制比为55 dB（横跨c波段的>为46 dB）。采用基于硅微环的可调谐激光器的最低测量线宽为37 kHz （250 Gb/s）相干光传输。(c)根据OSA开放获取出版协议的条款，2018年美国光学学会
We demonstrate a III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform. A III-V semiconductor gain chip is hybridized into the silicon chip by edge-coupling the silicon chip through a Si3N4 spot size converter. The demonstrated packaging method requires only passive alignment and is thus suitable for high-volume production. The laser has a largest output power of 11 mW with a maximum wall-plug efficiency of 4.2%, tunability of 60 nm (more than covering the C-band), and a side-mode suppression ratio of 55 dB (>46 dB across the C-band). The lowest measured linewidth is 37 kHz (250 Gb/s coherent optical transmission using a silicon micro-ring-based tunable laser. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement