Novel devices based on the combination of nitride and II–VI materials
Novel devices based on the combination of nitride and II–VI materials
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基于氮化物和 II-VI 材料组合的新型器件
DOI：
10.1002/pssa.200565429
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
D. Hommel
中科院分区：
文献类型：
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作者：
A. Murai;C. Kruse;L. McCarthy;U. Mishra;S. Denbaars;D. Hommel
我们展示了GaN和ZnSe基材料的直接晶片键合。我们报告了InGaN/GaN发光二极管（LED）和ZnSe基II-VI族材料通过直接晶片键合结合的结构、光学和电学特性。进行反射率、透射电子显微镜（TEM）和电流-电压（I-V）测量。结合的样品在510 nm的波长处表现出比具有Al帽的对照LED更高的反射率。横截面TEM显示低温样品具有均匀的晶片键合界面，没有空隙或空腔，而观察到在较高温度下键合的样品在半导体界面处具有透镜形空腔。（© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
We demonstrate the direct wafer bonding of GaN and ZnSe‐based materials. We report on the structural, optical, and electrical characteristics of InGaN/GaN light‐emitting diodes (LEDs) and ZnSe‐based II–VI materials combined by direct wafer bonding. Reflectivity, transmission electron microscopy (TEM), and current–voltage (I –V ) measurements were performed. The bonded sample exhibited a higher reflectivity at the wavelength of 510 nm than a control LED with an Al cap. Cross‐sectional TEM revealed a uniform wafer‐bonded interface with no voids or cavities for the low temperature sample, while the sample bonded at a higher temperature was observed to have lens‐shaped cavities at semiconductor interfaces. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)