Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices
Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices
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DOI：
10.1109/miel.2014.6842083
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发表时间：
2014-05
期刊：
影响因子：
5
通讯作者：
S. Dimitrijev;Jisheng Han;H. A. Moghadam;A. Aminbeidokhti
中科院分区：
文献类型：
--
作者：
S. Dimitrijev;Jisheng Han;H. A. Moghadam;A. Aminbeidokhti
本文综述了SiC和GaN器件在功率开关应用中的发展，具体确定了四个应用要求：（1）高阻断电压，（2）高功率效率，（3）高开关速度和（4）常关操作。具体的器件和材料特性，如导通电阻，寄生电容，和能隙值，进行了比较和讨论，确定的应用要求。在回顾了硅作为一种材料的基本局限性之后，本文介绍了推动使用SiC开发商用肖特基二极管和晶体管的材料优势。最后一节分析了GaN的潜力，使进一步的技术进步超出了硅的理论极限，并显着降低电力电子开关的成本。
This article reviews the development of SiC and GaN devices for power-switching applications in the context of four specifically identified application requirements: (1) high-blocking voltage, (2) high-power efficiency, (3) high-switching speed, and (4) normally OFF operation. Specific device and material characteristics, such as ON resistance, parasitic capacitances, and energy-gap values, are compared and discussed in relation to the identified application requirements. Following a review of the fundamental limitations of silicon as a material, this article describes the material advantages that motivated the development of commercially available Schottky diodes and transistors using SiC. The last section analyzes the potential of GaN to enable further technical progress beyond the theoretical limit of Si and to significantly reduce the cost of power-electronic switches.