Crystalline and Ferroelectric Properties of Pb(Zr, Ti)O3 Thin Films Grown by Low-Temperature Metalorganic Chemical Vapor Deposition
Crystalline and Ferroelectric Properties of Pb(Zr, Ti)O3 Thin Films Grown by Low-Temperature Metalorganic Chemical Vapor Deposition
复制标题
低温金属有机化学气相沉积 Pb(Zr, Ti)O3 薄膜的晶体和铁电性能
DOI：
10.1143/jjap.41.6686
复制
发表时间：
2002
影响因子：
1.5
通讯作者：
H. Niu
中科院分区：
文献类型：
--
作者：
M. Shimizu;M. Okaniwa;H. Fujisawa;H. Niu
采用金属有机物化学气相沉积（MOCVD）技术，以PbTiO 3为晶种，成功地实现了Pb（Zr，Ti）O3（PZT）薄膜的低温生长。研究了PbTiO 3晶种的晶化性质对PZT薄膜的晶化和铁电性能的影响。PZT薄膜的取向及其程度受到PbTiO 3种子的强烈影响。当种子的沉积温度从380 °C增加到450°C时，在390°C下生长的PZT薄膜显示出更高的取向。用380-450° C沉积的种子生长的PZT薄膜显示出6.9-15.9 μC/cm 2的反射极化（2 Pr）和93-162 kV/cm的矫顽场（2 Ec）。研究了有籽晶和无籽晶PZT薄膜的结晶和铁电性能。
Low-temperature growth of Pb(Zr, Ti)O3 (PZT) thin films, as low as 390°C, by metalorganic chemical vapor deposition (MOCVD) using PbTiO3 seeds was successfully achieved. Influence of the crystalline nature of PbTiO3 seeds on crystalline and ferroelectric properties of the PZT thin films were investigated. The orientation of PZT films and its degree were strongly influenced by those of PbTiO3 seeds. PZT thin films grown at 390°C showed higher orientation as the deposition temperatures of the seeds increased from 380 to 450°C. PZT thin films grown with the 380–450°C-deposited seeds showed remanent polarization (2Pr) of 6.9–15.9 µC/cm2 and coercive field (2Ec) of 93–162 kV/cm. Crystalline and ferroelectric properties of PZT films with and without seeds were also investigated.