Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots
Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots
复制标题
高密度(In,Ga)As/GaP量子点的室温光致发光
DOI：
10.1063/1.3646911
复制
发表时间：
2011
影响因子：
4
通讯作者：
A. Corre
中科院分区：
文献类型：
--
作者：
T. N. Thanh;C. Robert;C. Cornet;M. Perrin;J. Jancu;N. Bertru;J. Even;N. Chevalier;H. Folliot;O. Durand;A. Corre
报道了在GaP衬底上制备高密度（In，Ga）As自组装量子点的实验结果。良好的结构和电子性能已经实现，所揭示的室温光致发光测量和通过比较两个InAs/GaAs和InAs/InP材料参考系统。这是支持的原子计算，其中铟纳入InGaAs/GaP量子结构被发现，以提高I型bandlineup和直接带隙特性。带隙的光致发光温度依赖性证明了量子限制效应。我们的研究结果提供了一个有效的框架，以实现基于InGaAs/GaP纳米结构的硅光学器件。
We report on the achievement of high density (In,Ga)As self-assembled quantum dots on GaP substrate with a good homogeneity. Good structural and electronic properties have been achieved, as revealed by room temperature photoluminescence measurements and by comparison to both InAs/GaAs and InAs/InP materials reference systems. This is supported by atomistic calculations where the indium incorporation in InGaAs/GaP quantum structures is found to enhance both the type-I bandlineup and direct bandgap properties. The photoluminescence temperature dependence of the bandgap evidences the quantum confinement effects. Our results provide a valid framework to implement silicon optical devices based on InGaAs/GaP nanostructures.