Study of effect annealing temperature on the structure, morphology and photocatalytic activity of Si doped TiO2 thin films deposited by electron beam evaporation
Study of effect annealing temperature on the structure, morphology and photocatalytic activity of Si doped TiO2 thin films deposited by electron beam evaporation
复制标题
退火温度对电子束蒸发沉积Si掺杂TiO2薄膜结构、形貌及光催化活性的影响研究
DOI:
10.1016/j.apsusc.2011.07.085
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发表时间:
2011-10-01
影响因子:
6.7
通讯作者:
Lu, Lude
中科院分区:
文献类型:
--
作者:
Lu, Zhongdan;Jiang, Xiaohong;Lu, Lude
Transparent Si-doped TiO2 thin films (Si-TiO2) were deposited on quartz glasses using electron beam evaporation (EBE) and annealed at different temperature in an air atmosphere. The structure and morphology of these films were analyzed by X-ray diffraction (XRD), Raman microscopy (Raman), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Meanwhile the photocatalytic activity of the films has also been evaluated on the basis of the degradation degree of rhodamine B in aqueous solution. Our experimental results suggest that the annealing temperature impact a strong effect on the structure, morphology and photocatalytic activity of Si-TiO2 thin films. Furthermore the enhanced thermal stability of Si-TiO2 films enabled them to elevate the phase transformation temperature of TiO2 from anatase to rutile and enhanced the photocatalytic efficiency. (C) 2011 Elsevier B. V. All rights reserved.