Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure
Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure
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DOI：
10.1109/ted.2020.3040137
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发表时间：
2021-01
影响因子：
3.1
通讯作者：
Luodan Hu;H. Lou;Wentao Li;Kuan‐Chang Chang;Xinnan Lin
中科院分区：
文献类型：
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作者：
Luodan Hu;H. Lou;Wentao Li;Kuan‐Chang Chang;Xinnan Lin
对电荷等离子体无结FinFET（CP-JLF）和无结积累型FinFET（JAM）与传统无结FinFET（JLF）的统计特性进行了比较研究。线边缘粗糙度（LER），随机掺杂波动（RDF），和功函数的变化引起的优点的关键数字的变化进行了分析。结果表明，JAM和CP-JLF比常规JLF对LER和RDF更免疫。此外，提高源极中的掺杂浓度同时保持漏极中相对较低的掺杂浓度有利于降低JAM中的RDF引起的电流变化。此外，随着源极掺杂浓度的增加，栅极长度对电流变化的影响变得不那么显著甚至可以忽略不计，这有助于减轻缩放时更严重的RDF。此外，对于JAM和CP-JLF来说，控制对LER和RDF有重大影响的源极侧的几何形状和掺杂变化是必不可少的。总体而言，具有改进的电流驱动和减少的统计可变性的JAM和CP-JLF减轻了阻碍常规JLF的两个主要障碍。
This paper presents a comprehensive study on the statistical variability in charge plasma junctionless FinFET (CP-JLF) and junctionless accumulation-mode FinFET (JAM) compared with conventional junctionless FinFET (JLF). The variability in key figures of merits induced by line edge roughness (LER), random dopant fluctuation (RDF), and work function variation is analyzed. Results indicate that JAM and CP-JLF are more immune to LER and RDF than conventional JLF. Furthermore, elevating doping concentration in source while remaining relatively lower in drain is beneficial in reducing RDF-induced current variability in JAM. Besides, the impact of gate length on current variability becomes less significant or even negligible as source doping concentration increases, which helps alleviate more serious RDF upon scaling. Moreover, it is essential for JAM and CP-JLF to control geometry and doping variation in the source side that have major influence on LER and RDF. Overall, JAM and CP-JLF with improved current driving and reduced statistical variability mitigate two main obstacles that hinder conventional JLF.