30-nm scale fabrication of magnetic tunnel junctions using EB assisted CVD hard masks
30-nm scale fabrication of magnetic tunnel junctions using EB assisted CVD hard masks
复制标题
DOI：
10.1109/tmag.2005.854786
复制
发表时间：
2005-10
影响因子：
2.1
通讯作者：
S. Isogami;M. Tsunoda;M. Takahashi
中科院分区：
文献类型：
--
作者：
S. Isogami;M. Tsunoda;M. Takahashi
30纳米规模的磁性隧道结（MTJ）的制造进行了演示。扫描电子显微镜（SEM）用于碳硬掩模的化学气相沉积（CVD）。采用电子束CVD方法，可以在MTJ薄膜上形成小于几个10 nm的碳柱.利用氩离子研磨来图案化MTJ，氩离子研磨与膜平面的法线的入射角被确定为45/spl deg/和75/spl deg/。利用直流四探针技术在室温下成功地测量了80 nm尺度MTJ的TMR特性。
30-nm scale fabrication of magnetic tunnel junctions (MTJs) was demonstrated. A scanning electron microscope (SEM) was used for chemical-vapor deposition (CVD) of carbon hard masks. Using electron beam (EB)-CVD, less than several 10-nm scale carbon pillar could be formed on MTJ films. Argon ion milling, of which incident angle from the normal of the film plane was determined 45/spl deg/ and 75/spl deg/, was utilized to pattern the MTJs. TMR properties of 80-nm scale MTJs were successfully measured using DC-four-probe at room temperature.