Analysis of the relation between leakage current and dislocations in GaN-based light-emittins devices
Analysis of the relation between leakage current and dislocations in GaN-based light-emittins devices
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GaN基发光器件漏电流与位错关系分析
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
et. al.
中科院分区：
文献类型：
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作者：
S. W. Lee;et. al.
